Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPB020N10N5
Tip pachet
TO 263
Dimensiune celula
OptiMOS™ 5
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
11.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 6,91
Buc. (Intr-un pachet de 5) (fara TVA)
€ 8,223
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 6,91
Buc. (Intr-un pachet de 5) (fara TVA)
€ 8,223
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 6,91 | € 34,55 |
25 - 95 | € 5,67 | € 28,35 |
100 - 245 | € 4,86 | € 24,30 |
250 - 495 | € 4,56 | € 22,80 |
500+ | € 4,05 | € 20,25 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPB020N10N5
Tip pachet
TO 263
Dimensiune celula
OptiMOS™ 5
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
11.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V