Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK-7
Serie
OptiMOS™ 5
Montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Latime
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
9.45mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
4.2V
Detalii produs
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 7,86
Buc. (Livrat pe rola) (fara TVA)
€ 9,353
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
2
€ 7,86
Buc. (Livrat pe rola) (fara TVA)
€ 9,353
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
2 - 18 | € 7,86 | € 15,72 |
20 - 98 | € 6,52 | € 13,04 |
100 - 198 | € 5,64 | € 11,28 |
200 - 498 | € 5,31 | € 10,62 |
500+ | € 4,74 | € 9,48 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK-7
Serie
OptiMOS™ 5
Montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Latime
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
9.45mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
4.2V
Detalii produs
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.