Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
OptiMOSTM3
Tip pachet
PQFN 3 x 3
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
0.018 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
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P.O.A.
5000
P.O.A.
5000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
OptiMOSTM3
Tip pachet
PQFN 3 x 3
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
0.018 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon