Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
140 mA
Maximum Drain Source Voltage
250 V
Tip pachet
SC-59
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Lungime
3mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
1.6mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Inaltime
1.1mm
Dimensiune celula
BSR92P
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,17
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,202
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,17
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,202
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
140 mA
Maximum Drain Source Voltage
250 V
Tip pachet
SC-59
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Lungime
3mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
1.6mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Inaltime
1.1mm
Dimensiune celula
BSR92P
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V