Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
5.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.35mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Inaltime
1.1mm
Dimensiune celula
OptiMOS 3
Temperatura minima de lucru
-55 °C
Tara de origine
Singapore
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P.O.A.
5000
P.O.A.
5000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
5.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.35mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Inaltime
1.1mm
Dimensiune celula
OptiMOS 3
Temperatura minima de lucru
-55 °C
Tara de origine
Singapore