Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
BSC035N10NS5
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
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Buc. (Pe o rola de 5000) (fara TVA)
€ 2,071
Buc. (Pe o rola de 5000) (cu TVA)
5000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
BSC035N10NS5
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V