Documente tehnice
Specificatii
Marca
InfineonCurent iesire
420 mA
Tensiunea de alimentare
17.5V
Numar pini
28
Tip pachet
DSO
Fall Time
45ns
Numar iesiri
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Intarziere
800ns
Number of Drivers
6
Bridge Type
Full Bridge
Polarity
Non-Inverting
Montare
Surface Mount
Tara de origine
Malaysia
Detalii produs
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.
MOSFET & IGBT Drivers, Infineon (International Rectifier)
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P.O.A.
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1000
Documente tehnice
Specificatii
Marca
InfineonCurent iesire
420 mA
Tensiunea de alimentare
17.5V
Numar pini
28
Tip pachet
DSO
Fall Time
45ns
Numar iesiri
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Intarziere
800ns
Number of Drivers
6
Bridge Type
Full Bridge
Polarity
Non-Inverting
Montare
Surface Mount
Tara de origine
Malaysia
Detalii produs
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.