Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.25mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2mm
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Inaltime
0.8mm
Dimensiune celula
OptiMOS
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,09
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,107
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,09
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,107
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 3000 | € 0,09 | € 270,00 |
6000 - 12000 | € 0,08 | € 240,00 |
15000+ | € 0,07 | € 210,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.25mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2mm
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Inaltime
0.8mm
Dimensiune celula
OptiMOS
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.