Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Latime
2.6mm
Transistor Material
Si
Lungime
4.6mm
Typical Gate Charge @ Vgs
5.7 nC @ 10 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.6mm
Detalii produs
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,99
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,178
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,99
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,178
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 0,99 | € 9,90 |
50 - 240 | € 0,86 | € 8,60 |
250 - 490 | € 0,83 | € 8,30 |
500+ | € 0,80 | € 8,00 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Latime
2.6mm
Transistor Material
Si
Lungime
4.6mm
Typical Gate Charge @ Vgs
5.7 nC @ 10 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.6mm
Detalii produs