Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.6 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
DMN2058U
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
91 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1mm
Detalii produs
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 50) (cu TVA)
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€ 0,09
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,107
Buc. (Intr-un pachet de 50) (cu TVA)
50
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.6 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
DMN2058U
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
91 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1mm
Detalii produs