Documente tehnice
Specificatii
Memory Size
2Mbit
Organisation
128K x 16 bit
Number of Words
128K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Timp montare
Surface Mount
Tip pachet
TSOP
Numar pini
44
Dimensiuni
18.51 x 10.26 x 1.04mm
Inaltime
1.04mm
Maximum Operating Supply Voltage
3.6 V
Latime
10.26mm
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.2 V
Temperatura maxima de lucru
+85 °C
Lungime
18.51mm
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
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Documente tehnice
Specificatii
Memory Size
2Mbit
Organisation
128K x 16 bit
Number of Words
128K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Timp montare
Surface Mount
Tip pachet
TSOP
Numar pini
44
Dimensiuni
18.51 x 10.26 x 1.04mm
Inaltime
1.04mm
Maximum Operating Supply Voltage
3.6 V
Latime
10.26mm
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.2 V
Temperatura maxima de lucru
+85 °C
Lungime
18.51mm
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.