Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Serie
NexFET
Tip pachet
VSONP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 29,75
€ 1,19 Buc. (Livrat pe rola) (fara TVA)
€ 35,40
€ 1,416 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
25
€ 29,75
€ 1,19 Buc. (Livrat pe rola) (fara TVA)
€ 35,40
€ 1,416 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
25
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
25 - 45 | € 1,19 | € 5,95 |
50 - 120 | € 1,06 | € 5,30 |
125 - 245 | € 0,94 | € 4,70 |
250+ | € 0,89 | € 4,45 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Serie
NexFET
Tip pachet
VSONP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs