Documente tehnice
Specificatii
Marca
VishayTimp montare
Through Hole
Tip pachet
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Numar pini
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Tara de origine
China
Detalii produs
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 2,60
€ 2,60 Buc. (fara TVA)
€ 3,09
€ 3,09 Buc. (cu TVA)
1
€ 2,60
€ 2,60 Buc. (fara TVA)
€ 3,09
€ 3,09 Buc. (cu TVA)
1
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Cantitate | Pret unitar |
---|---|
1 - 9 | € 2,60 |
10 - 49 | € 2,32 |
50 - 99 | € 2,06 |
100 - 249 | € 1,89 |
250+ | € 1,72 |
Documente tehnice
Specificatii
Marca
VishayTimp montare
Through Hole
Tip pachet
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Numar pini
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Tara de origine
China
Detalii produs
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.