Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Tip pachet
SOT-346 (SC-59)
Timp montare
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+125 °C
Tara de origine
Japan
Detalii produs
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
€ 6,00
€ 0,24 Buc. (Intr-un pachet de 25) (fara TVA)
€ 7,14
€ 0,286 Buc. (Intr-un pachet de 25) (cu TVA)
25
€ 6,00
€ 0,24 Buc. (Intr-un pachet de 25) (fara TVA)
€ 7,14
€ 0,286 Buc. (Intr-un pachet de 25) (cu TVA)
25
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 100 | € 0,24 | € 6,00 |
125 - 225 | € 0,21 | € 5,25 |
250 - 475 | € 0,20 | € 5,00 |
500 - 1225 | € 0,19 | € 4,75 |
1250+ | € 0,19 | € 4,75 |
Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Tip pachet
SOT-346 (SC-59)
Timp montare
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+125 °C
Tara de origine
Japan
Detalii produs