Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Tip pachet
SOT-32
Timp montare
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.8 x 7.8 x 2.7mm
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
P.O.A.
Each (Supplied in a Bag) (fara TVA)
Impachetare pentru productie (Punga)
10
P.O.A.
Each (Supplied in a Bag) (fara TVA)
Impachetare pentru productie (Punga)
10
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Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Tip pachet
SOT-32
Timp montare
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.8 x 7.8 x 2.7mm
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.