Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
420 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
1050 V
Maximum Emitter Base Voltage
15 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.55 x 4.65 x 16.07mm
Tara de origine
Taiwan, Province Of China
Detalii produs
High Voltage NPN Transistors, Taiwan Semiconductor
Bipolar Transistors, Taiwan Semiconductor
P.O.A.
Each (In a Tube of 50) (fara TVA)
50
P.O.A.
Each (In a Tube of 50) (fara TVA)
50
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Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
420 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
1050 V
Maximum Emitter Base Voltage
15 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.55 x 4.65 x 16.07mm
Tara de origine
Taiwan, Province Of China
Detalii produs