Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
80 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
80 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Inaltime
15.75mm
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Latime
4.83mm
Maximum Power Dissipation
65 W
Tara de origine
China
P.O.A.
Each (In a Tube of 50) (fara TVA)
50
P.O.A.
Each (In a Tube of 50) (fara TVA)
50
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
80 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
80 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Inaltime
15.75mm
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Latime
4.83mm
Maximum Power Dissipation
65 W
Tara de origine
China