Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-250 V
Tip pachet
TO-3P
Timp montare
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
75
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
15.8 x 5 x 20.1mm
Detalii produs
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Impachetare pentru productie (Tub)
2
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Impachetare pentru productie (Tub)
2
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-250 V
Tip pachet
TO-3P
Timp montare
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
75
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
15.8 x 5 x 20.1mm
Detalii produs
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.