Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
105 W
Tip pachet
EASY1B
Configuration
Common Collector
Timp montare
PCB Mount
Channel Type
N
Numar pini
23
Switching Speed
1MHz
Transistor Configuration
3 Phase
Dimensiuni
48 x 33.8 x 12mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 42,35
€ 42,35 Buc. (fara TVA)
€ 50,40
€ 50,40 Buc. (cu TVA)
1
€ 42,35
€ 42,35 Buc. (fara TVA)
€ 50,40
€ 50,40 Buc. (cu TVA)
1
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
1 - 1 | € 42,35 |
2 - 4 | € 39,84 |
5 - 9 | € 37,80 |
10 - 24 | € 35,79 |
25+ | € 33,00 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
105 W
Tip pachet
EASY1B
Configuration
Common Collector
Timp montare
PCB Mount
Channel Type
N
Numar pini
23
Switching Speed
1MHz
Transistor Configuration
3 Phase
Dimensiuni
48 x 33.8 x 12mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.