Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.48mm
Lungime
4.97mm
Maximum Operating Supply Voltage
5.5 V
Latime
3.98mm
Inaltime
1.48mm
Temperatura maxima de lucru
+85 °C
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 49,60
€ 4,96 Each (Supplied in a Tube) (fara TVA)
€ 59,02
€ 5,90 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 49,60
€ 4,96 Each (Supplied in a Tube) (fara TVA)
€ 59,02
€ 5,90 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
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Cantitate | Pret unitar |
---|---|
10 - 49 | € 4,96 |
50 - 99 | € 4,79 |
100 - 499 | € 4,46 |
500+ | € 4,30 |
Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.48mm
Lungime
4.97mm
Maximum Operating Supply Voltage
5.5 V
Latime
3.98mm
Inaltime
1.48mm
Temperatura maxima de lucru
+85 °C
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.