Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
28
Dimensiuni
18.11 x 7.62 x 2.37mm
Lungime
18.11mm
Maximum Operating Supply Voltage
5.5 V
Latime
7.62mm
Inaltime
2.37mm
Temperatura maxima de lucru
+85 °C
Automotive Standard
AEC-Q100
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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€ 12,98
€ 12,98 Buc. (fara TVA)
€ 15,45
€ 15,45 Buc. (cu TVA)
1
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Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
28
Dimensiuni
18.11 x 7.62 x 2.37mm
Lungime
18.11mm
Maximum Operating Supply Voltage
5.5 V
Latime
7.62mm
Inaltime
2.37mm
Temperatura maxima de lucru
+85 °C
Automotive Standard
AEC-Q100
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.