Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Memory Size
16kbit
Organisation
2K x 8 bit
Interfata
Serial-I2C
Data Bus Width
8bit
Timp montare
Surface Mount
Tip pachet
DFN
Numar pini
8
Dimensiuni
4.5 x 4 x 0.7mm
Lungime
4.5mm
Maximum Operating Supply Voltage
3.65 V
Latime
4mm
Inaltime
0.7mm
Temperatura maxima de lucru
+85 °C
Number of Words
2K
Temperatura minima de lucru
-40 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2.7 V
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Memory Size
16kbit
Organisation
2K x 8 bit
Interfata
Serial-I2C
Data Bus Width
8bit
Timp montare
Surface Mount
Tip pachet
DFN
Numar pini
8
Dimensiuni
4.5 x 4 x 0.7mm
Lungime
4.5mm
Maximum Operating Supply Voltage
3.65 V
Latime
4mm
Inaltime
0.7mm
Temperatura maxima de lucru
+85 °C
Number of Words
2K
Temperatura minima de lucru
-40 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2.7 V
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.