Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Lungime
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1.12mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Detalii produs
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,47
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,749
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,47
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,749
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,47 | € 7,35 |
50 - 120 | € 1,33 | € 6,65 |
125 - 245 | € 1,19 | € 5,95 |
250 - 495 | € 1,11 | € 5,55 |
500+ | € 1,03 | € 5,15 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.26mm
Lungime
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1.12mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Detalii produs