Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAK SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
4.9mm
Temperatura minima de lucru
-55 °C
Inaltime
1.04mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,03
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,226
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 1,03
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,226
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,03 | € 5,15 |
50 - 245 | € 0,94 | € 4,70 |
250 - 495 | € 0,69 | € 3,45 |
500 - 1245 | € 0,63 | € 3,15 |
1250+ | € 0,56 | € 2,80 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerPAK SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
4.9mm
Temperatura minima de lucru
-55 °C
Inaltime
1.04mm
Tara de origine
China
Detalii produs