Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
20 V
Tip pachet
1206 ChipFET
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
7 nC @ 5 V
Latime
1.7mm
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Tara de origine
China
Detalii produs
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,57
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,678
Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
€ 0,57
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,678
Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 180 | € 0,57 | € 11,40 |
200 - 480 | € 0,52 | € 10,40 |
500 - 980 | € 0,47 | € 9,40 |
1000 - 1980 | € 0,44 | € 8,80 |
2000+ | € 0,41 | € 8,20 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
20 V
Tip pachet
1206 ChipFET
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
7 nC @ 5 V
Latime
1.7mm
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Tara de origine
China
Detalii produs