Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Tip pachet
PowerPAK ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Latime
1.9mm
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.8mm
Serie
TrenchFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Tip pachet
PowerPAK ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Latime
1.9mm
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.8mm
Serie
TrenchFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs