Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.34 A
Maximum Drain Source Voltage
8 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +5 V
Latime
1.2mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
7.7 nC @ 5 V
Temperatura minima de lucru
-55 °C
Inaltime
0.6mm
Detalii produs
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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20
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.34 A
Maximum Drain Source Voltage
8 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +5 V
Latime
1.2mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
7.7 nC @ 5 V
Temperatura minima de lucru
-55 °C
Inaltime
0.6mm
Detalii produs