Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,96
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,332
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,96
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,332
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,96 | € 9,80 |
50 - 120 | € 1,61 | € 8,05 |
125 - 245 | € 1,50 | € 7,50 |
250 - 495 | € 1,39 | € 6,95 |
500+ | € 1,29 | € 6,45 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs