Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Tip pachet
TSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
3.1mm
Forward Diode Voltage
1.2V
Inaltime
0.85mm
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€ 0,41
Buc. (Pe o rola de 5000) (fara TVA)
€ 0,488
Buc. (Pe o rola de 5000) (cu TVA)
5000
€ 0,41
Buc. (Pe o rola de 5000) (fara TVA)
€ 0,488
Buc. (Pe o rola de 5000) (cu TVA)
5000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
5000 - 5000 | € 0,41 | € 2.050,00 |
10000+ | € 0,36 | € 1.800,00 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Tip pachet
TSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
3.1mm
Forward Diode Voltage
1.2V
Inaltime
0.85mm