Documente tehnice
Specificatii
Marca
ToshibaChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Tip pachet
PW Mold
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Latime
5.5mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Temperatura minima de lucru
-55 °C
Inaltime
2.3mm
Detalii produs
MOSFET P-Channel, 2SJ Series, Toshiba
MOSFET Transistors, Toshiba
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
10
P.O.A.
10
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Tip pachet
PW Mold
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Latime
5.5mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Temperatura minima de lucru
-55 °C
Inaltime
2.3mm
Detalii produs