Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Dimensiune celula
NexFET
Tip pachet
PICOSTAR
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
2.2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Inaltime
0.2mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs
N-Channel NexFET™ Dual MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
250
P.O.A.
250
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Dimensiune celula
NexFET
Tip pachet
PICOSTAR
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
2.2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Inaltime
0.2mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs