Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
12 V
Tip pachet
PICOSTAR
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.04mm
Typical Gate Charge @ Vgs
1.06 nC @ 4.5 V
Latime
0.64mm
Transistor Material
Si
Dimensiune celula
FemtoFET
Temperatura minima de lucru
-55 °C
Inaltime
0.35mm
Detalii produs
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
12 V
Tip pachet
PICOSTAR
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.04mm
Typical Gate Charge @ Vgs
1.06 nC @ 4.5 V
Latime
0.64mm
Transistor Material
Si
Dimensiune celula
FemtoFET
Temperatura minima de lucru
-55 °C
Inaltime
0.35mm
Detalii produs