Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
19 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
19 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V