Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.6mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
11.1 nC @ 5 V
Inaltime
1.1mm
PRICED TO CLEAR
Yes
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Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.6mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
11.1 nC @ 5 V
Inaltime
1.1mm
PRICED TO CLEAR
Yes