Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh DM2
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.6V
Inaltime
20.15mm
Tara de origine
China
Detalii produs
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 6,74
Each (Supplied in a Tube) (fara TVA)
€ 8,021
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
2
€ 6,74
Each (Supplied in a Tube) (fara TVA)
€ 8,021
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
2 - 8 | € 6,74 | € 13,48 |
10 - 18 | € 6,17 | € 12,34 |
20 - 48 | € 5,49 | € 10,98 |
50 - 98 | € 4,90 | € 9,80 |
100+ | € 4,61 | € 9,22 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh DM2
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.6V
Inaltime
20.15mm
Tara de origine
China
Detalii produs
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.