Documente tehnice
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.75 x 5.15 x 20.15mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,67
Buc. (fara TVA)
€ 3,18
Buc. (cu TVA)
Standard
1
€ 2,67
Buc. (fara TVA)
€ 3,18
Buc. (cu TVA)
Standard
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 9 | € 2,67 |
10 - 99 | € 2,40 |
100 - 499 | € 2,30 |
500 - 999 | € 2,23 |
1000+ | € 2,15 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.75 x 5.15 x 20.15mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.