Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Tip pachet
D2PAK
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Latime
9.35mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Inaltime
4.37mm
Tara de origine
China
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Tip pachet
D2PAK
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Latime
9.35mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Inaltime
4.37mm
Tara de origine
China