Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-32
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
2.8 V
Maximum Collector Cut-off Current
0.2mA
Temperatura minima de lucru
-65 °C
Inaltime
10.8mm
Dimensiuni
7.8 x 2.7 x 10.8mm
Temperatura maxima de lucru
+150 °C
Lungime
7.8mm
Latime
2.7mm
Detalii produs
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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P.O.A.
Impachetare pentru productie (Tub)
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P.O.A.
Impachetare pentru productie (Tub)
5
Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-32
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
2.8 V
Maximum Collector Cut-off Current
0.2mA
Temperatura minima de lucru
-65 °C
Inaltime
10.8mm
Dimensiuni
7.8 x 2.7 x 10.8mm
Temperatura maxima de lucru
+150 °C
Lungime
7.8mm
Latime
2.7mm
Detalii produs
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.