Documente tehnice
Specificatii
Marca
SemikronMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Single
Tip pachet
SEMITRANS3
Montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Dimensiuni
106.4 x 61.4 x 30.5mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Incercati din nou mai tarziu
€ 276,52
Buc. (fara TVA)
€ 329,06
Buc. (cu TVA)
1
€ 276,52
Buc. (fara TVA)
€ 329,06
Buc. (cu TVA)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 9 | € 276,52 |
10 - 19 | € 254,21 |
20 - 49 | € 239,76 |
50 - 249 | € 226,29 |
250+ | € 213,79 |
Documente tehnice
Specificatii
Marca
SemikronMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Single
Tip pachet
SEMITRANS3
Montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Dimensiuni
106.4 x 61.4 x 30.5mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.