Documente tehnice
Specificatii
Marca
SemikronMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
SEMITRANS2
Configuration
Single
Montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Temperatura maxima de lucru
+175 °C
Dimensiuni
94 x 34 x 30.1mm
Temperatura minima de lucru
-40 °C
Latime
34mm
Detalii produs
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 76,09
Buc. (fara TVA)
€ 90,55
Buc. (cu TVA)
1
€ 76,09
Buc. (fara TVA)
€ 90,55
Buc. (cu TVA)
1
Documente tehnice
Specificatii
Marca
SemikronMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
SEMITRANS2
Configuration
Single
Montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Temperatura maxima de lucru
+175 °C
Dimensiuni
94 x 34 x 30.1mm
Temperatura minima de lucru
-40 °C
Latime
34mm
Detalii produs
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.