Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
Smini3-G1-B
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Latime
1.25mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.9mm
Dimensiune celula
MTM
Tara de origine
Malaysia
Detalii produs
N-Channel MOSFET, Panasonic
MOSFET Transistors, Panasonic
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P.O.A.
10
P.O.A.
10
Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
Smini3-G1-B
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Latime
1.25mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.9mm
Dimensiune celula
MTM
Tara de origine
Malaysia
Detalii produs