Documente tehnice
Specificatii
Marca
PanasonicChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
MTM
Tip pachet
Smini3-G1-B
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Latime
1.25mm
Transistor Material
Si
Lungime
2mm
Inaltime
0.8mm
Detalii produs
P-Channel MOSFET, Panasonic
MOSFET Transistors, Panasonic
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P.O.A.
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P.O.A.
50
Documente tehnice
Specificatii
Marca
PanasonicChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
MTM
Tip pachet
Smini3-G1-B
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Latime
1.25mm
Transistor Material
Si
Lungime
2mm
Inaltime
0.8mm
Detalii produs