Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N, P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SSMini6 F3 B
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
6 Ω, 17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.2mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.6mm
Inaltime
0.5mm
Serie
FG
Tara de origine
China
Detalii produs
N/P-Channel Dual MOSFET, Panasonic
MOSFET Transistors, Panasonic
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P.O.A.
8000
P.O.A.
8000
Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N, P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SSMini6 F3 B
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
6 Ω, 17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.2mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.6mm
Inaltime
0.5mm
Serie
FG
Tara de origine
China
Detalii produs