Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.05 to 0.13mA
Maximum Drain Source Voltage
40 V
Maximum Drain Gate Voltage
-40V
Configuration
Single
Transistor Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-883
Numar pini
3
Drain Gate On-Capacitance
0.7pF
Source Gate On-Capacitance
0.3pF
Dimensiuni
1.07 x 0.67 x 0.41mm
Lungime
1.07mm
Inaltime
0.41mm
Latime
0.67mm
Maximum Power Dissipation
100 mW
Temperatura maxima de lucru
+150 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
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P.O.A.
50
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.05 to 0.13mA
Maximum Drain Source Voltage
40 V
Maximum Drain Gate Voltage
-40V
Configuration
Single
Transistor Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-883
Numar pini
3
Drain Gate On-Capacitance
0.7pF
Source Gate On-Capacitance
0.3pF
Dimensiuni
1.07 x 0.67 x 0.41mm
Lungime
1.07mm
Inaltime
0.41mm
Latime
0.67mm
Maximum Power Dissipation
100 mW
Temperatura maxima de lucru
+150 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.