Documente tehnice
Specificatii
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
Si
Channel Type
P
Numar pini
3
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Timp montare
Surface Mount
Temperatura maxima de lucru
+150 °C
Maximum Gate Threshold Voltage
2.6V
Maximum Drain Source Voltage
75 V
Inaltime
4.5mm
Lungime
10mm
Maximum Power Dissipation
90 W
Latime
9.2mm
Maximum Continuous Drain Current
100 A
Maximum Drain Source Resistance
11 mΩ
Baterii
3 x AAA BatteryTip pachet
D2PAK (TO-263)
Typical Gate Charge @ Vgs
280 nC @ 10 V
Tara de origine
Korea, Republic Of
Detalii produs
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P.O.A.
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Documente tehnice
Specificatii
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
Si
Channel Type
P
Numar pini
3
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Timp montare
Surface Mount
Temperatura maxima de lucru
+150 °C
Maximum Gate Threshold Voltage
2.6V
Maximum Drain Source Voltage
75 V
Inaltime
4.5mm
Lungime
10mm
Maximum Power Dissipation
90 W
Latime
9.2mm
Maximum Continuous Drain Current
100 A
Maximum Drain Source Resistance
11 mΩ
Baterii
3 x AAA BatteryTip pachet
D2PAK (TO-263)
Typical Gate Charge @ Vgs
280 nC @ 10 V
Tara de origine
Korea, Republic Of
Detalii produs