Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
237 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
1.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
44 nC @ 4.5 V
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,78
Buc. (Pe o rola de 1500) (fara TVA)
€ 2,118
Buc. (Pe o rola de 1500) (cu TVA)
1500
€ 1,78
Buc. (Pe o rola de 1500) (fara TVA)
€ 2,118
Buc. (Pe o rola de 1500) (cu TVA)
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
237 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
1.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
44 nC @ 4.5 V
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia