Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+175 °C
Lungime
5.1mm
Number of Elements per Chip
1
Latime
6.1mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.5V
Inaltime
1.05mm
Tara de origine
Malaysia
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P.O.A.
1500
P.O.A.
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+175 °C
Lungime
5.1mm
Number of Elements per Chip
1
Latime
6.1mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.5V
Inaltime
1.05mm
Tara de origine
Malaysia