Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Inaltime
2.25mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Vietnam
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Inaltime
2.25mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Vietnam