Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
147 A
Maximum Drain Source Voltage
80 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
52 nC @ 10 V
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
147 A
Maximum Drain Source Voltage
80 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
52 nC @ 10 V
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines