Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Tara de origine
Czech Republic
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,50
Buc. (Pe o rola de 2500) (fara TVA)
€ 0,595
Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 0,50
Buc. (Pe o rola de 2500) (fara TVA)
€ 0,595
Buc. (Pe o rola de 2500) (cu TVA)
2500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Tara de origine
Czech Republic
Detalii produs